Silicon
	Duclos S J, Vohra Y K, Ruoff A L
	Physical Review Letters 58 (1987) 775-777
	hcp-to-fcc transition in silicon at 78 GPa and studies to 100 GPa
	Locality: synthetic
	Sample: at P = 87 GPa
	Note: fcc structure stable above 78 GPa
	_database_code_amcsd 0015275
	3.34 3.34 3.34 90 90 90 Fm3m
	atom x y z
	Si 0 0 0
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