LiGaSi2O6
Sato A, Osawa T, Ohashi H
Acta Crystallographica C51 (1995) 1959-1960
Low-temperature form of LiGaSi2O6
Locality: synthetic
Sample: T = 273 K
Note: anisoU's from ICSD
_database_code_amcsd 0010302
9.5394 8.5756 5.2508 90 110.124 90 P2_1/c
atom      x      y      z   Uiso U(1,1) U(2,2) U(3,3) U(1,2) U(1,3) U(2,3)
Li    .2479  .0125   .237   .016   .015   .020   .014  -.002   .006  -.001
Ga   .25033 .65098 .23963 .00407 .00387 .00479 .00365  .0001 .00145 .00014
SiA  .04726 .34077  .2683  .0041  .0037  .0053  .0035 -.0004  .0016 -.0001
SiB  .54799 .84060  .2525  .0040  .0037  .0049  .0038 -.0007  .0017 -.0001
O1A   .8640  .3326  .1534  .0048  .0038  .0065  .0038 -.0002  .0008 -.0002
O2A   .1148  .5121  .3132  .0075  .0075  .0070  .0089 -.0023  .0041 -.0004
O3A   .1081  .2623  .5688  .0070  .0046  .0108  .0055 -.0002  .0014  .0026
O1B   .3645  .8336  .1340  .0052  .0040  .0072  .0043 -.0002  .0013  .0003
O2B   .6189  .0085  .3431  .0076  .0087  .0072  .0082 -.0032  .0046 -.0019
O3B   .6064  .7307  .5210  .0086  .0058  .0132  .0072  .0008  .0027  .0054