Silicon
Duclos S J, Vohra Y K, Ruoff A L
Physical Review Letters 58 (1987) 775-777
hcp-to-fcc transition in silicon at 78 GPa and studies to 100 GPa
Locality: synthetic
Sample: at P = 87 GPa
Note: fcc structure stable above 78 GPa
_database_code_amcsd 0015275
3.34 3.34 3.34 90 90 90 Fm3m
atom x y z
Si   0 0 0