Silicon
      Duclos S J, Vohra Y K, Ruoff A L
      Physical Review Letters 58 (1987) 775-777
      hcp-to-fcc transition in silicon at 78 GPa and studies to 100 GPa
      Locality: synthetic
      Sample: at P = 87 GPa
      Note: fcc structure stable above 78 GPa
      _database_code_amcsd 0015275

      CELL PARAMETERS:    3.3400   3.3400   3.3400   90.000   90.000   90.000
      SPACE GROUP: Fm3m      
      X-RAY WAVELENGTH:     1.541838
      Cell Volume:     37.260
      Density (g/cm3):      5.006
      MAX. ABS. INTENSITY / VOLUME**2:      65.64765635    
      RIR:      4.270
      RIR based on corundum from Acta Crystallographica A38 (1982) 733-739
               2-THETA      INTENSITY    D-SPACING   H   K   L   Multiplicity
                47.13        100.00        1.9283    1   1   1         8
                54.98         45.94        1.6700    2   0   0         6
                81.51         27.11        1.1809    2   2   0        12
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       XPOW Copyright 1993 Bob Downs, Ranjini Swaminathan and Kurt Bartelmehs
  For reference, see Downs et al. (1993) American Mineralogist 78, 1104-1107.