Silicon
	Kasper J S, Richards S M
	Acta Crystallographica 17 (1964) 752-755
	The crystal structures of new forms of silicon and germanium
	Locality: synthetic
	_database_code_amcsd 0009282
	6.636 6.636 6.636 90 90 90 Ia3
	atom x y z Biso
	Si .1003 .1003 .1003 .89
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	Silicon
	Wyckoff R W G
	Crystal Structures 1 (1963) 7-83
	Second edition. Interscience Publishers, New York, New York
	Sample at T = 300 K
	_database_code_amcsd 0011243
	5.43070 5.43070 5.43070 90 90 90 Fd3m
	atom x y z
	Si 0 0 0
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	Silicon
	Wyckoff R W G
	Crystal Structures 1 (1963) 7-83
	Second edition. Interscience Publishers, New York, New York
	Sample at T = 1573 K
	_database_code_amcsd 0011244
	5.43070 5.43070 5.43070 90 90 90 Fd3m
	atom x y z
	Si 0 0 0
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	Silicon
	Hom T, Kiszenick W, Post B
	Journal of Applied Crystallography 8 (1975) 457-458
	Accurate lattice constants from multiple reflection mesurements II.
	lattice constants of germanium, silicon and diamond
	Locality: synthetic
	Sample: at T = 25 C
	_database_code_amcsd 0012843
	5.430941 5.430941 5.430941 90 90 90 Fd3m
	atom x y z
	Si 0 0 0
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	Silicon
	Dutta B N
	Physica Status Solidi 2 (1962) 984-987
	Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
	Locality: synthetic
	Sample: at T = 25 C
	_database_code_amcsd 0015103
	5.4304 5.4304 5.4304 90 90 90 Fd3m
	atom x y z
	Si 0 0 0
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	Silicon
	Dutta B N
	Physica Status Solidi 2 (1962) 984-987
	Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
	Locality: synthetic
	Sample: at T = 345 C
	_database_code_amcsd 0015104
	5.4370 5.4370 5.4370 90 90 90 Fd3m
	atom x y z
	Si 0 0 0
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	Silicon
	Dutta B N
	Physica Status Solidi 2 (1962) 984-987
	Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
	Locality: synthetic
	Sample: at T = 525 C
	_database_code_amcsd 0015105
	5.4410 5.4410 5.4410 90 90 90 Fd3m
	atom x y z
	Si 0 0 0
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	Silicon
	Dutta B N
	Physica Status Solidi 2 (1962) 984-987
	Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
	Locality: synthetic
	Sample: at T = 615 C
	_database_code_amcsd 0015106
	5.4432 5.4432 5.4432 90 90 90 Fd3m
	atom x y z
	Si 0 0 0
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	Silicon
	Dutta B N
	Physica Status Solidi 2 (1962) 984-987
	Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
	Locality: synthetic
	Sample: at T = 700 C
	_database_code_amcsd 0015107
	5.4455 5.4455 5.4455 90 90 90 Fd3m
	atom x y z
	Si 0 0 0
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	Silicon
	Dutta B N
	Physica Status Solidi 2 (1962) 984-987
	Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
	Locality: synthetic
	Sample: at T = 785 C
	_database_code_amcsd 0015108
	5.4480 5.4480 5.4480 90 90 90 Fd3m
	atom x y z
	Si 0 0 0
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	Silicon
	Dutta B N
	Physica Status Solidi 2 (1962) 984-987
	Lattice constants and thermal expansion of silicon up to 900 C by X-ray method
	Locality: synthetic
	Sample: at T = 878 C
	_database_code_amcsd 0015109
	5.4515 5.4515 5.4515 90 90 90 Fd3m
	atom x y z
	Si 0 0 0
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	Silicon
	McMahon M I, Nelmes R J
	Physical Review B47 (1993) 8337-8340
	New high-pressure phase of Si
	Locality: synthetic
	Sample: structure exists between 13 GPa to 18 GPa
	Note: intermediate structure between those of Si II and Si V
	_database_code_amcsd 0015170
	4.737 4.502 2.550 90 90 90 Imma
	atom x y z
	Si 0 .25 .193
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	Silicon
	Duclos S J, Vohra Y K, Ruoff A L
	Physical Review Letters 58 (1987) 775-777
	hcp-to-fcc transition in silicon at 78 GPa and studies to 100 GPa
	Locality: synthetic
	Sample: at P = 87 GPa
	Note: fcc structure stable above 78 GPa
	_database_code_amcsd 0015275
	3.34 3.34 3.34 90 90 90 Fm3m
	atom x y z
	Si 0 0 0
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	Silicon
	Hanfland M, Schwarz U, Syassen K, Takemura K
	Physical Review Letters 82 (1999) 1197-1200
	Crystal structure of the high-pressure phase silicon VI
	Locality: synthetic
	Sample: at P = 38.4 GPa
	Note: phase VI
	_database_code_amcsd 0015281
	8.0242 4.7961 4.7760 90 90 90 Cmca
	atom x y z
	Si1 0 .173 .328
	Si2 .218 0 0
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	Silicon
	Hanfland M, Schwarz U, Syassen K, Takemura K
	Physical Review Letters 82 (1999) 1197-1200
	Crystal structure of the high-pressure phase silicon VI
	Locality: synthetic
	Sample: at P = 42.5 GPa
	Note: phase VI
	_database_code_amcsd 0015282
	7.9686 4.7759 4.7546 90 90 90 Cmca
	atom x y z
	Si1 0 .172 .328
	Si2 .219 0 0
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	Silicon
	Hanfland M, Schwarz U, Syassen K, Takemura K
	Physical Review Letters 82 (1999) 1197-1200
	Crystal structure of the high-pressure phase silicon VI
	Locality: synthetic
	Sample: at P = 45.5 GPa
	Note: phase VI
	_database_code_amcsd 0015283
	7.9200 4.7586 4.7361 90 90 90 Cmca
	atom x y z
	Si1 0 .173 .324
	Si2 .224 0 0
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	Silicon
	Olijnyk H, Sikka S K, Holzapfel W B
	Physics Letters 103A (1984) 137-140
	Structural phase transitions in Si and Ge under pressures up to 50 GPa
	Locality: synthetic
	Sample: at P = 19.5 GPa
	Note: phase V, structure stable between 16 GPa & 34 GPa
	_database_code_amcsd 0015303
	2.527 2.527 2.373 90 90 120 P6/mmm
	atom x y z
	Si 0 0 0
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	Silicon
	Olijnyk H, Sikka S K, Holzapfel W B
	Physics Letters 103A (1984) 137-140
	Structural phase transitions in Si and Ge under pressures up to 50 GPa
	Locality: synthetic
	Sample: at P = 43 GPa
	Note: phase VII, structure stable above 43 GPa
	_database_code_amcsd 0015304
	2.444 2.444 4.152 90 90 120 P6_3/mmc
	atom x y z
	Si 1/3 2/3 .25
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